Memory devices and methods for forming the same

A method for forming a memory device, comprising:

• forming a peripheral circuit on a peripheral area of a first semiconductor layer;
• forming a stack comprising interleaved first layers and second layers on a memory area of the first semiconductor layer;
• forming a channel structure in the stack extending in a first direction;
• and
• forming a bit line in contact with the channel structure.

A system, comprising:

• a memory device, comprising:
• a semiconductor layer;
• a peripheral circuit disposed on the semiconductor layer;
• and
• an array of memory cells disposed aside the peripheral circuit on the semiconductor layer, wherein each of the memory cells comprises:
• a semiconductor body extending in a first direction, wherein a first end of the semiconductor body is in contact with the semiconductor layer;
• a word line gate extending in a second direction perpendicular to the first direction;
• a plate line gate extending in the second direction;
• and
• a dielectric layer disposed between the semiconductor body and the word line gate and the plate line gate;
• and
• a memory controller coupled to the memory device and configured to control operations of the array of memory cells through the peripheral circuit.