Confined charge trap layer

A processing tool comprising:

• a central transfer station comprising a robot configured to move a wafer;
• a plurality of processing stations, each process station connected to the central transfer station and providing a processing region separated from processing regions of adjacent process stations, the plurality of process stations comprising:
• a recessing chamber configured to recess a second material layer through an opening in a memory stack comprising alternating layers of a first material layer and a second material layer on a common source line to form a first recessed region adjacent a sidewall surface of the second material layer, the common source line comprising one or more of a sacrificial layer, an oxide layer, and a poly-silicon layer,
• a deposition chamber configured to deposit a deposition enabling layer (DEL) in the first recessed, the deposition enabling layer (DEL) comprising polysilicon and having a hydrogen-terminated surface,
• a second recessing chamber configured to recess the deposition enabling layer (DEL) to remove a portion of the deposition enabling layer (DEL) and form a second recessed region adjacent the sidewall surface of the second material layer,
• a selective deposition chamber configured to selectively deposit a trap layer in the second recessed region on the hydrogen-terminated surface of the deposition enabling layer (DEL), on the sidewall surface of the common source line, on the bottom surface of the opening in the memory stack, and not on a sidewall surface of the first material layer;
• and
• a controller connected to the central transfer station and the plurality of process stations, the controller configured to activate the robot to move the wafer between process stations, and to control a process occurring in each of the process stations.