Semiconductor device and method of fabricating the same

Abstract

The invention discloses a semiconductor device and a method of fabricating the same. The semiconductor device includes a substrate, storage node pads, a capacitor structure and a supporting structure. The storage node pads are disposed on the substrate. The capacitor structure is disposed on the storage node pads and includes a plurality of capacitors. The capacitor structure includes a bottom electrode layer, a capacitor dielectric layer and a top electrode layer from bottom to top, wherein the top portion of the bottom electrode layer is provided with a recess. The supporting structure includes a plurality of first supporting layers and a plurality of second supporting layers from bottom to top, and the supporting structure connects two adjacent capacitors, wherein the recesses face each second supporting layer respectively.

Dependencies are inferred from the claim text.