Packaged power electronic device, in particular bridge circuit comprising power transistors, and assembling process thereof

A method, comprising:

• forming a first assembly including:
• coupling a first MOSFET transistor to the first support element;
• coupling a second MOSFET transistor to the first support element;
• arranging a first contacting element to overlap the first MOSFET transistor and the second MOSFET transistor, the first contacting element straddling the first MOSFET transistor and the second MOSFET transistor;
• arranging a block of thermally conductive material on the first contacting element;
• forming a second assembly including:
• coupling a third MOSFET transistor to a second support element;
• coupling a fourth MOSFET transistor to the second support element;
• arranging a first clip element on the third MOSFET transistor;
• arranging a second clip element on the fourth MOSFET transistor;
• arranging a second contacting element on the first clip element;
• arranging a third contacting element on the second clip element;
• coupling the first assembly to the second assembly includes stacking the second contacting element and the third contacting element onto the block of thermally conductive material.

A method, comprising:

• forming a first assembly including:
• coupling a first MOSFET transistor to the first support element;
• coupling a second MOSFET transistor to the first support element;
• arranging a first contacting element to overlap the first MOSFET transistor and the second MOSFET transistor, the first contacting element straddling the first MOSFET transistor and the second MOSFET transistor;
• arranging a block of thermally conductive material on the first contacting element;
• forming a second assembly including:
• coupling a first supporting region to a second support element;
• coupling a second supporting region to the second support element, the second supporting region being spaced apart from the first supporting region;
• coupling a third MOSFET transistor to the second support element;
• coupling a fourth MOSFET transistor to the second support element;
• arranging a first clip element on the third MOSFET transistor and on a first supporting region on the second support element, the first clip element extending laterally outward from a first end of the third MOSFET transistor;
• arranging a second clip element on the fourth MOSFET transistor and on a second supporting region on the second support element, the second clip element extending laterally outward form a second end of the fourth MOSFET transistor;
• arranging a second contacting element on the first clip element;
• arranging a third contacting element on the second clip element;
• coupling the first assembly to the second assembly includes stacking the second contacting element and the third contacting element onto the block of thermally conductive material.