Semiconductor laser element

A semiconductor laser element, comprising:

• a semiconductor epitaxial structure including a light-emitting layer and a light-emitting control layer, wherein the light-emitting control layer is located above the light-emitting layer and forms a light-emitting opening area;
• a light-absorbing structure being located on the semiconductor epitaxial structure and forms a hollow part to expose the semiconductor epitaxial structure, wherein a band gap of the light-absorbing structure is smaller than the light-emitting band gap;
• a transparent conductive layer including a recessed window part and an extension part, the recessed window part is located in the hollow part and covers the semiconductor epitaxial structure, and the extension part covers the light-absorbing structure;
• and
• an electrode layer being located on the transparent conductive layer and forms an opening to expose the transparent conductive layer, wherein the recessed window part is located in the opening;
• wherein a position of the recessed window part corresponds to a position of the light-emitting opening area based on the light-emitting direction.