Light emitting diode and light emitting device

A light emitting diode, comprising:

• an epitaxial structure having a first surface and a second surface opposite to each other, wherein the epitaxial structure sequentially comprises a first-type semiconductor layer, an active layer, and a second-type semiconductor layer in a direction from the first surface to the second surface,
• a first electrode electrically connected to the first-type semiconductor layer and at least comprising a first pad electrode and a first extended electrode;
• and
• an insulating layer located above an exposed mesa of the first-type semiconductor layer and the second-type semiconductor layer, wherein the insulating layer is provided with a first via penetrating through the insulating layer, the first pad electrode is disposed in the first via and is electrically connected to the first-type semiconductor layer, the insulating layer is further provided with a second via, and the first extended electrode is disposed in the second via and is electrically connected to the first-type semiconductor layer,
• wherein an upper surface and a sidewall of the first pad electrode are covered with a first metal covering layer, the first metal covering layer is provided with a first bump at a bottom portion of the sidewall of the first pad electrode, the first bump is located below the insulating layer and contacts the first-type semiconductor layer, and the first metal covering layer is made of inert conductive metal.