Micro light-emitting diode and display device using the same

A micro light-emitting diode (LED) comprising:

• a semiconductor layered structure including a front side and a back side, said semiconductor layered structure further including a first-type semiconductor layer, an active layer, and a second-type semiconductor layer sequentially disposed in a thickness direction from said front side to said back side of said semiconductor layered structure, said semiconductor layered structure having a first depression on said back side that indents in said thickness direction from said second-type semiconductor layer to said first-type semiconductor layer through said active layer to partially expose said first-type semiconductor layer, a first mesa formed at said first-type semiconductor layer, a second mesa formed at said second-type semiconductor layer, and a mesa side wall located between said first mesa and said second mesa;
• a first metallic electrode disposed on said back side of said semiconductor layered structure, and electrically connected to said first-type semiconductor structure;
• a second metallic electrode disposed on said back side of said semiconductor layered structure, and electrically connected to said second-type semiconductor structure;
• and
• an insulating layered unit disposed on and covering said semiconductor layered structure, and extending from said first mesa to said second mesa, a portion of said insulating layered unit on said first mesa having a first insulating layer disposed on said first mesa, a portion of said insulating layered unit on said second mesa having a second insulating layer that has a first sublayer covering said second mesa, and a second sublayer covering said first sublayer;
• wherein said first insulating layer has a first opening formed on said first mesa, said first metallic electrode extending from inside of said first opening on said first mesa to an outside surface of said first insulating layer;
• wherein said first sublayer has a second opening formed on said second mesa, and said second metallic electrode being partially disposed in said second opening;
• wherein a third opening is formed above said second opening and in said second sublayer;
• and
• wherein a perpendicular projection of said second opening onto a plane parallel to said back side of said semiconductor layered structure entirely falls within a perpendicular projection of said third opening onto the plane, said second metallic electrode extends from inside of said second opening to said third opening, and a boundary wall of said second insulating layer that is exposed within said third opening includes at least one of said first sublayer or said second sublayer.