Optoelectronic semiconductor chip

An optoelectronic semiconductor chip comprising:

• a semiconductor layer sequence having an active zone for generating radiation with a wavelength of maximum intensity L;
• and
• a mirror for the radiation on a rear side opposite a light extraction side, wherein
• the mirror comprises at least one cover layer,
• the cover layer is formed with a material transparent to the radiation and has an optical of at most 5 L inclusive,
• the cover layer is followed by several intermediate layers in a direction away from the semiconductor layer sequence,
• the intermediate layers have alternately high and low refractive indices for the radiation and are each made of a material transparent to the radiation, and
• the intermediate layers are followed in the direction away from the semiconductor layer sequence by at least one metal layer as a reflection layer.

An optoelectronic semiconductor chip comprising:

• a semiconductor layer sequence having an active zone for generating radiation with a wavelength of maximum intensity L;
• and
• a mirror for the radiation on a rear side opposite a light extraction side, wherein
• the mirror comprises at least one cover layer,
• the cover layer is formed with a material transparent to the radiation and has an optical thickness of at least 0.5 L inclusive,
• the cover layer is followed by several intermediate layers in a direction away from the semiconductor layer sequence,
• the intermediate layers have alternately high and low refractive indices for the radiation and are each made of a material transparent to the radiation,
• the intermediate layers are followed in the direction away from the semiconductor layer sequence by at least one metal layer, and
• wherein intermediate layers with a high refractive index are made of TiO2 and intermediate layers with a low refractive index are made of SiO2.