High voltage and high-power diamond based junction-gate field effect transistor (jfet) switch with photo-controlled gate

A switch operable under high-voltage and high-power, comprising:

• a P-type diamond layer doped with an acceptor material;
• an N-type diamond region doped with a donor material, wherein the P-type diamond layer is at least partially in contact with the N-type diamond region;
• a layer comprising an aperture configured to allow illumination from a light source to pass through to reach the N-type diamond region;
• and
• one or more gradient masks at least partially surrounding the aperture from multiple sides to allow variable absorption or transmission of illumination from the light source to reach an internal region of the switch;
• wherein the N-type diamond region, upon receiving the illumination and application of a first bias voltage, is configured to generate a conduction current that remains on in an absence of the illumination.