Avalanche photodiode
AssigneeSTMicroelectronics International N.V.
InventorsAntonin ZIMMER, Dominique GOLANSKI, Sebastien PLACE, Guillaume MARCHAND
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Abstract
The present description concerns an avalanche photodiode comprising: a main PN junction adapted to being reverse-biased; and a plurality of semiconductor regions including at least: a first epitaxial semiconductor region of a first conductivity type; and a second semiconductor region of the second conductivity type, said second region being arranged to at least partially surround the first region, and comprising surfaces in contact with surfaces of said first region. The present description also concerns a method of manufacturing such a photodiode.
Claims19
An avalanche photodiode, comprising:
- a main PN junction adapted to being reverse-biased;
- and
- a plurality of semiconductor regions including at least:
- a first epitaxial semiconductor region of a first conductivity type;
- a second semiconductor region of the second conductivity type, said second region being arranged to at least partially surround the first region, and comprising surfaces in contact with surfaces of said first region;
- and
- a third semiconductor region.
A method, comprising:
- manufacturing an avalanche photodiode having a main PN junction adapted to being reverse-biased, the method including:
- forming of a plurality of semiconductor regions including at least:
- forming a first epitaxial semiconductor region of a first conductivity type;
- and
- forming a second semiconductor region of the second conductivity type, said second region being arranged to at least partially surround the first region, and comprising surfaces in contact with surfaces of said first region.
Dependencies are inferred from the claim text.