Complementary field effect transistor (cfet) with balanced n and p drive current

A method of fabricating a complementary field effect transistor (CFET) structure, the method comprising:

• forming an n-channel field effect transistor (nFET) having a plurality of horizontal p-doped nanosheet channels arranged in parallel in a first vertical stack and separated from each other by a first vertical distance (D1), each horizontal p-doped nanosheet channel having a first width (W1), and connecting a first source contact to a first drain contact through a first gate-all-around (GAA) region having a first length (L1) and being connected to a first gate contact;
• and
• forming a p-channel field effect transistor (pFET) having a plurality of horizontal n-doped nanosheet channels arranged in parallel in a second vertical stack and separated from each other by a second vertical distance (D2), each horizontal n-doped nanosheet channel having a second width (W2), and connecting a second source contact to a second drain contact through a second GAA region having a second length (L2) and being connected to a second gate contact,
• wherein the first vertical stack is disposed on the second vertical stack, and wherein W2/L2 is not equal to W1/L1.