Semiconductor device and method of manufacture

A semiconductor device comprising:

• a first semiconductor fin and a second semiconductor fin over a semiconductor substrate;
• a first liner adjacent to both the first semiconductor fin and the second semiconductor fin;
• a second liner over the first liner;
• a third liner over the second liner, the third liner comprising nitrogen at a percentage of less than about 10%;
• a fourth liner over the third liner;
• a capping layer over the fourth liner, the capping layer comprising carbon at a percentage of less than about 10%;
• and
• a dielectric cap over the capping layer, wherein the first semiconductor fin extends further away from the semiconductor substrate than the dielectric cap.

A semiconductor device comprising:

• a first semiconductor fin and a second semiconductor fin over a semiconductor substrate;
• at least four liners between the first semiconductor fin and the second semiconductor fin, wherein a first one of the at least four liners comprises nitrogen at a percentage of less than about 10% and wherein a second one of the at least four liners comprises nitrogen at a percentage of less than about 10%, the first one and the second one of the at least four liners being separated by a third one of the at least four liners;
• a capping layer over the at least four liners, the capping layer comprising carbon at a percentage of less than about 10%;
• and
• a dielectric cap over the capping layer, wherein the first semiconductor fin extends further away from the semiconductor substrate than the dielectric cap.