Metal oxide semiconductor having epitaxial source drain regions and a method of manufacturing same using dummy gate process

A method for manufacturing a semiconductor device, the method comprising:

• forming a gate insulating film over a silicon-based substrate;
• forming a first Ti—N film over the gate insulating film, the first Ti—N film at least including titanium (Ti) and nitrogen (N);
• forming a dummy gate electrode over the first Ti—N film;
• forming a first insulating film that is located at least in part over opposite sides of the dummy gate electrode;
• forming a first recess region by partially removing the silicon-based substrate through recess etching;
• epitaxially growing, on a surface of the first recess region, a source/drain material that includes silicon and an atom having a lattice constant different from a lattice constant of silicon;
• forming a second insulating film that is located at least in part over sides of the first insulating film;
• forming a second recess by removing a portion of the dummy gate electrode;
• and
• forming a gate electrode in the second recess with intermediary of the gate insulating film.