Gallium nitride component, method for manufacturing gallium nitride component, and electronic device

An electronic device, comprising:

• a circuit board;
• and
• a gallium nitride component connected to the circuit board, the gallium nitride component including:
• a gallium nitride layer, wherein the gallium nitride layer has a gate region and a non-gate region outside the gate region;
• a barrier layer, wherein the barrier layer is located on a surface of a side of the gallium nitride layer, and a constituent material of the barrier layer comprises aluminum, gallium, and nitrogen;
• and
• a gate, wherein the gate is located on a side that is of the barrier layer in the gate region and that is away from the gallium nitride layer, wherein
• the barrier layer is located in the gate region and the non-gate region;
• and in a direction perpendicular to the surface of the gallium nitride layer, a size of the barrier layer located in the gate region is greater than a size of the barrier layer located in the non-gate region, and aluminum concentration on a side that is of the barrier layer located in the gate region and that faces the gallium nitride layer is greater than aluminum concentration on a side that is of the barrier layer located in the gate region and that faces the gate.