Semiconductor device

A semiconductor device comprising:

• a channel layer and a barrier layer provided in this order on a substrate;
• and
• a plurality of gate electrodes, a plurality of source electrodes, and a plurality of drain electrodes that are formed on the substrate via the channel layer and the barrier layer and extend in a first direction, wherein
• the plurality of source electrodes and the plurality of drain electrodes are alternately arranged in a second direction intersecting the first direction,
• the plurality of gate electrodes is arranged one by one between the source electrode and the drain electrode, and
• the channel layer or the barrier layer has a plurality of non-conductive regions formed at positions opposed to the respective gate electrodes and arranged side by side, with a predetermined interval interposed therebetween, in an extending direction of the gate electrodes, the non-conductive regions inhibiting a current from flowing to the channel layer.