Low aluminum concentration aluminum gallium nitride interlayer for group iii-nitride (iii-n) devices

A transistor structure, comprising:

• a group III-nitride (III-N) layer;
• a gate structure, a source structure, and a drain structure coupled to the III-N layer;
• and
• a first aluminum gallium nitride layer over at least a portion of the III-N layer between the gate structure and the drain structure, the first aluminum gallium nitride layer having a first aluminum concentration, wherein the gate structure comprises:
• a second aluminum gallium nitride layer adjacent to the III-N layer, the second aluminum gallium nitride layer having a second aluminum concentration less than the first aluminum concentration;
• a gate dielectric layer on the third aluminum gallium nitride layer;
• and
• a gate electrode on the gate dielectric layer.

A system, comprising:

• an integrated circuit (IC) die comprising a transistor structure, the transistor structure comprising:
• a group III-nitride (III-N) layer;
• a gate structure, a source structure, and a drain structure coupled to the III-N layer;
• a first aluminum gallium nitride layer over at least a portion of the III-N layer between the gate structure and the drain structure, the first aluminum gallium nitride layer having a first aluminum concentration;
• and
• a second aluminum gallium nitride layer on the first aluminum gallium nitride layer, the second aluminum gallium nitride layer having a second aluminum concentration less than the first aluminum concentration;
• and
• a power supply coupled to the IC die.