Dsa (directed self-assembly) based spacer and liner for shorting margin of via

An integrated circuit (IC) device, comprising:

• a first conductive structure;
• a second conductive structure in parallel with the first conductive structure in a direction, wherein a dimension of the second conductive structure in the direction is the same or substantially the same as a dimension of the first conductive structure in the direction;
• an insulative structure comprising a first portion and a second portion, wherein the first portion is over the first conductive structure, and a second portion is over the second conductive structure;
• and
• a via connected to the first conductive structure, the via separated from the second conductive structure by the insulative structure.

A method for forming an integrated circuit (IC) device, comprising:

• forming a lamellar pattern over a layer, the layer comprising a first conductive structure and a second conductive structure, the lamellar pattern comprising first lamellar structures alternating with second lamella structures;
• forming a plurality of insulative structures based on the lamellar pattern, an individual insulative structure comprising a first insulative structure and a second insulative structures, the second insulative structure wrapping around at least part of the first insulative structure;
• providing a first via between two of the plurality of insulative structures, the first via connected to the first conductive structure;
• and
• providing a second via between another two of the plurality of insulative structures, the second via connected to the second conductive structure.