Method for Forming a Semiconductor Device

A semiconductor device formed according to a method, the method comprising:

• forming a device structure on a substrate, the device structure comprising:
• a device layer stack comprising:
• a bottom device sub-stack comprising at least one bottom channel layer;
• and
• a top device sub-stack comprising at least one top channel layer;
• a sacrificial gate structure extending across the device layer stack;
• and
• bottom source/drain structures on opposite ends of the at least one bottom channel layer;
• forming an opening exposing the top device sub-stack, wherein forming the opening comprises etching the sacrificial gate structure;
• forming a cut through the top device sub-stack by etching back the top device sub-stack from the opening, wherein the etching extends through each of the at least one top channel layer and is stopped over the bottom device sub-stack;
• and
• subsequent to forming the cut, forming a functional gate stack on the at least one bottom channel layer.