Thin Film Transistor, Fabrication Method Thereof, and Display Apparatus Comprising the Same

A method of fabricating a thin film transistor, the method comprising:

• preparing a base substrate;
• forming an oxide semiconductor layer on the base substrate;
• forming a channel protection layer on the base substrate;
• and
• forming a gate electrode on the channel protection layer;
• wherein the channel protection layer is deposited by an ALD or CVD method using a precursor, and
• wherein the precursor includes at least one of di-isopropylaminosilane, (N,N-dimethylamino)trimethylsilane, vinyltrimethoxysilane, tetrakis(dimethylamino)silane, tris(dimethylamino)silane, bis(ethyl-methyl-amino)silane.