Dielectric barrier for backside interconnect separation

An electronic device, comprising:

• a chip package comprising one or more dies, at least one of the one or more dies comprising
• a first semiconductor device having a first semiconductor region extending in a first direction between a first source or drain region and a second source or drain region, and a first gate structure extending in a second direction over the first semiconductor region;
• a second semiconductor device having a second semiconductor region extending in the first direction between a third source or drain region and a fourth source or drain region, and a second gate structure extending in the second direction over the second semiconductor region;
• a first conductive contact on an underside of the first source or drain region and a second conductive contact on an underside of the third source or drain region;
• and
• a dielectric wall extending in the first direction between and contacting both the first semiconductor region and the second semiconductor region, extending in the first direction between the first source or drain region and the third source or drain region, and extending in the first direction between the second source or drain region and the fourth source or drain region, wherein the dielectric wall further extends in a third direction along at least an entire thickness of the first conductive contact and the second conductive contact.

An integrated circuit comprising:

• a first semiconductor device having a first semiconductor region extending in a first direction from a first source or drain region, and a first gate structure extending in a second direction over the first semiconductor region;
• a second semiconductor device having a second semiconductor region extending in the first direction from a second source or drain region, and a second gate structure extending in the second direction over the second semiconductor region, the second source or drain region being adjacent to the first source or drain region along the second direction;
• a dielectric layer beneath the first source or drain region and the second source or drain region;
• a first conductive contact extending through an entire thickness of the dielectric layer and contacting an underside of the first source or drain region, and a second conductive contact extending through the entire thickness of the dielectric layer and contacting an underside of the second source or drain region;
• and
• a dielectric wall extending in the first direction between the first source or drain region and the second source or drain region, wherein the dielectric wall further extends in a third direction between the first conductive contact and the second conductive contact.