Epitaxial source or drain region with a wrapped conductive contact

An electronic device, comprising:

• a chip package comprising one or more dies, at least one of the one or more dies comprising
• a first semiconductor device having a subfin and one or more first semiconductor nanoribbons extending in a first direction between a first source or drain region and a second source or drain region;
• a second semiconductor device having the subfin and one or more second semiconductor nanoribbons extending in the first direction between the first source or drain region and a third source or drain region;
• a conductive layer that extends completely around the first source or drain region between the one or more first semiconductor nanoribbons and the one or more second semiconductor nanoribbons, wherein the subfin extends beneath the conductive layer;
• and
• a dielectric layer on a top surface of the subfin, such that the dielectric layer is between the subfin and the conductive layer.

An integrated circuit comprising:

• a semiconductor device having a subfin and one or more semiconductor nanoribbons extending in a first direction from a source or drain region;
• a conductive layer that extends completely around the source or drain region, wherein the subfin extends beneath the conductive layer;
• and
• a dielectric layer on a top surface of the subfin, such that at least a portion of the dielectric layer is between the subfin and the conductive layer.