Method for Manufacturing a Semiconductor Device

A method for manufacturing a semiconductor device, the method comprising:

• forming a first active pattern extending in a first direction;
• forming a second active pattern spaced apart from the first active pattern in a second direction;
• forming a field insulating film between the first active pattern and the second active pattern;
• forming a first pre-gate structure extending in the second direction and intersecting the first and second active patterns, the first pre-gate structure including a first pre-gate electrode and a first pre-gate spacer;
• forming a second pre-gate structure extending in the second direction and intersecting the first and second active patterns, the second pre-gate structure including a second pre-gate electrode and a second pre-gate spacer;
• forming an interlayer insulating film between the first pre-gate structure and the second pre-gate structure on the field insulating film;
• forming a gate separation trench to partially remove the first pre-gate electrode, the first pre-gate spacer, and the interlayer insulating film, such that the gate separation trench exposes the field insulating film;
• forming a connecting spacer to remove a portion of the first pre-gate spacer, such that the connecting spacer is disposed between the gate separation trench and the filed insulating film;
• and
• forming a gate separation structure filling the gate separation trench,
• wherein the second pre-gate electrode and the second pre-gate spacer are not removed,
• wherein the gate separation structure includes a gate separation liner and a gate separation filling film on the gate separation liner, and
• wherein the connecting spacer protrudes from a top surface of the field insulating film, and the gate separation liner of the gate separation structure contacts the connecting spacer and extends along a top surface and sidewalls of the connecting spacer and along the top surface of the field insulating film.

A method for manufacturing a semiconductor device, the method comprising:

• forming a first lower pattern extending in a first direction;
• forming a plurality of first sheet patterns on the first lower pattern;
• forming a second lower pattern extending in the first direction and spaced apart from the first lower pattern in a second direction;
• forming a plurality of second sheet patterns on the second lower pattern;
• forming a field insulating film between the first lower pattern and the second lower pattern;
• forming a pre-gate structure extending in the second direction and intersecting the first and second lower patterns, the pre-gate structure including a pre-gate electrode surrounding the plurality of first sheet patterns and the plurality of second sheet patterns, and a pre-gate spacer on sidewalls of the pre-gate electrode;
• forming a gate separation trench to partially remove the pre-gate electrode and the pre-gate spacer, such that the gate separation trench exposes the field insulating film;
• forming a connecting spacer to remove a portion of the pre-gate spacer, such that the connecting spacer is disposed between the gate separation trench and the filed insulating film;
• and
• forming a gate separation structure filling the gate separation trench,
• wherein the gate separation structure includes a gate separation liner and a gate separation filling film on the gate separation liner, and
• wherein the connecting spacer protrudes from a top surface of the field insulating film, and the gate separation liner of the gate separation structure contacts the connecting spacer and extends along a top surface and sidewalls of the connecting spacer and along the top surface of the field insulating film, and
• wherein a height from a top surface of the gate separation structure to a lowermost part of the gate separation structure is greater than a depth from the top surface of the gate separation structure to a bottom surface of the connecting spacer.