Loading patent…
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJeng-Wei Yu, Tsz-Mei Kwok, Tsung-Hsi Yang, Li-Wei Chou, Ming-Hua Yu
Estimating the term…
A method includes forming isolations extending into a semiconductor substrate, recessing the isolation regions, wherein a semiconductor region between the isolation regions forms a semiconductor fin, forming a first dielectric layer on the isolation regions and the semiconductor fin, forming a second dielectric layer over the first dielectric layer, planarizing the second dielectric layer and the first dielectric layer, and recessing the first dielectric layer. A portion of the second dielectric layer protrudes higher than remaining portions of the first dielectric layer to form a protruding dielectric fin. A portion of the semiconductor fin protrudes higher than the remaining portions of the first dielectric layer to form a protruding semiconductor fin. A portion of the protruding semiconductor fin is recessed to form a recess, from which an epitaxy semiconductor region is grown. The epitaxy semiconductor region expands laterally to contact a sidewall of the protruding dielectric fin.
A device comprising:
A device comprising:
A device comprising:
Dependencies are inferred from the claim text.