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AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
InventorsMariko Yamashita, Kanako Komatsu, Yoshiaki Ishii, Daisuke Shinohara
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A semiconductor device includes a semiconductor substrate of a first conductivity type, a semiconductor layer of the first conductivity type provided on the semiconductor substrate, a first deep semiconductor region of a second conductivity type provided between the semiconductor substrate and the semiconductor layer, a first guard ring region of the second conductivity type, a first separation region of the second conductivity type contacting the first guard ring region and the first deep semiconductor region, a first semiconductor region of the first conductivity type, and a second semiconductor region of the first conductivity type; the first guard ring region and the first deep semiconductor region surround a first device part of the semiconductor layer; the first separation region partitions the first device part into a first region and a second region; and the first and second semiconductor regions are provided in the first and second regions.
A semiconductor device, comprising:
A semiconductor device, comprising:
Dependencies are inferred from the claim text.