Shallow trench textured regions and associated methods
AssigneeSiOnyx, Inc.
InventorsHomayoon HADDAD, Jutao JIANG
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Abstract
Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor layer having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor layer and positioned to interact with electromagnetic radiation. The textured region can be formed from a series of shallow trench isolation features.
Claims20
An optoelectronic photodiode device having enhanced absorption of electromagnetic radiation, comprising:
- a semiconductor layer having one or more doped regions that form at least one junction;
- a first textured region disposed on a light-incident surface of the semiconductor layer;
- and
- a second textured region disposed at a backside of the semiconductor layer and positioned to interact with electromagnetic radiation that passes through the semiconductor layer.
A method of making an optoelectronic photodiode device having enhanced absorption of electromagnetic radiation, the method comprising:
- doping a semiconductor substrate to form at least one junction;
- creating a first textured region on a light-incident surface of the semiconductor substrate;
- creating a second textured region on a backside of the semiconductor substrate;
- and
- forming one or more deep trench isolation features in the semiconductor substrate, wherein the one or more deep trench isolation features are configured to provide light trapping functionality.
Dependencies are inferred from the claim text.