Method of making a semiconductor image sensor having reflection component

A method of making a semiconductor image sensor, the method comprising:

• forming a photodiode in a substrate;
• forming a reflection structure between the photodiode and a bottommost surface of the substrate;
• and
• forming an interconnect structure, wherein a portion of the interconnect structure extends through the reflection structure to electrically connect to the photodiode.

A method of making a semiconductor image sensor, the method comprising:

• forming a first photodiode in a substrate, wherein the first photodiode is configured to detect a first wavelength of light;
• forming a second photodiode in the substrate, wherein the second photodiode is configured to detect a second wavelength of light different from the first wavelength of light;
• forming a reflection structure between the first photodiode and a bottommost surface of the substrate;
• and
• forming an interconnect structure electrically connected to the first photodiode and the second photodiode, wherein a portion of the interconnect structure extends through the reflection structure to electrically connect to the first photodiode.