Integrated Circuit Device and a Method for Forming the Same

Abstract

The disclosure relates to a method for forming an integrated circuit device that includes forming a forksheet device on a frontside of a substrate, the forksheet device comprising a first and a second transistor separated by a vertically oriented dielectric wall, such that the forksheet device is formed over a base portion of the substrate and the dielectric wall extends into the base portion; subsequent to forming the forksheet device, thinning the substrate from a backside of the substrate; subsequent to the thinning, forming a first trench underneath the first transistor and a second trench underneath the second transistor by etching the base portion from the backside, the first and second trenches being separated by the dielectric wall; and forming a first backside wiring line in the first trench and a second backside wiring line in the second trench.

Dependencies are inferred from the claim text.