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US 2024/0203979 A1Published application
Layer transfer transistor for gallium nitride (gan) integrated circuit technology
AssigneeIntel Corporation
InventorsSamuel James BADER, Han Wui THEN
Life of this patent
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Abstract
Layer transfer for Gallium nitride (GaN) integrated circuit technology is described. In an example, an integrated circuit structure includes a GaN device on or above a substrate, the GaN device including a source, a gate and a drain. A silicon-based transistor structure is above substrate, the silicon-based transistor structure at a level above the gate of the GaN device in a region outside of the GaN device.
Claims21
An integrated circuit structure, comprising:
- a GaN device on or above a substrate, the GaN device comprising a source, a gate and a drain;
- and
- a silicon-based transistor structure above substrate, the silicon-based transistor structure at a level above the gate of the GaN device in a region outside of the GaN device.
A method of fabricating an integrated circuit structure, the method comprising:
- forming a GaN device on or above a substrate, the GaN device comprising a source, a gate and a drain;
- and
- forming a silicon-based transistor structure above substrate using a layer transfer process, the silicon-based transistor structure formed at a level above the gate of the GaN device in a region outside of the GaN device.
A computing device, comprising:
- a board;
- and
- a component coupled to the board, the component including an integrated circuit structure, comprising:
- a GaN device on or above a substrate, the GaN device comprising a source, a gate and a drain;
- and
- a silicon-based transistor structure above substrate, the silicon-based transistor structure at a level above the gate of the GaN device in a region outside of the GaN device.
3 more elements
A computing device, comprising:
- a board;
- and
- a component coupled to the board, the component including an integrated circuit structure, the integrated circuit structure fabricated according to a method comprising:
- forming a GaN device on or above a substrate, the GaN device comprising a source, a gate and a drain;
- and
- forming a silicon-based transistor structure above substrate using a layer transfer process, the silicon-based transistor structure formed at a level above the gate of the GaN device in a region outside of the GaN device.
3 more elements
Dependencies are inferred from the claim text.