Layer transfer clamp for gallium nitride (gan) integrated circuit technology

An integrated circuit structure, comprising:

• a SiC device on or above a substrate, the SiC device comprising a source, a gate and a drain;
• and
• a silicon-based clamp structure above substrate, the silicon-based clamp structure over the SiC device in a region that overlaps the source and the gate of the SiC device.

A method of fabricating an integrated circuit structure, the method comprising:

• forming a GaN device on or above a substrate, the GaN device comprising a source, a gate and a drain;
• and
• forming a silicon-based clamp structure above substrate using a layer transfer process, the silicon-based clamp structure formed over the GaN device in a region that overlaps the source and the gate of the GaN device.