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US 2024/0203949 A1Published application
Redistribution structure for semiconductor device and method of forming same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPo-Han Wang, Yu-Hsiang Hu, Hung-Jui Kuo
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Abstract
A semiconductor device having a redistribution structure and a method of forming the same are provided. A semiconductor device includes a semiconductor structure, a redistribution structure over and electrically coupled the semiconductor structure, and a connector over and electrically coupled to the redistribution structure. The redistribution structure includes a base via and stacked vias electrically interposed between the base via and the connector. The stacked vias are laterally spaced apart from the base via.
Claims20
A method comprising:
- forming a redistribution structure over a semiconductor structure, wherein the semiconductor structure comprises a first connector, wherein forming the redistribution structure comprises:
- forming a first insulating layer directly on the semiconductor structure;
- forming a first metallization pattern, the first metallization pattern comprising a base via and a first redistribution line, the base via extending through the first insulating layer over the first connector of the semiconductor structure;
- and
- forming stacked vias over the first insulating layer, the stacked vias being electrically coupled to the base via, wherein a first via of the stacked vias physically contacts the first redistribution line, the stacked vias overlapping each other;
- and
- forming a second connector over the redistribution structure, wherein the stacked vias electrically couple the first connector to the second connector, wherein the stacked vias are laterally between the first connector and the second connector in a cross-sectional view.
4 more elements
A method comprising:
- forming a redistribution structure over a semiconductor structure, wherein the semiconductor structure comprises a first connector, wherein forming the redistribution structure comprises:
- forming a first insulating layer directly on the semiconductor structure;
- forming a first metallization pattern, the first metallization pattern comprising a base via and a first redistribution line, the base via extending through the first insulating layer over the first connector of the semiconductor structure;
- and
- forming stacked vias over the first insulating layer, the stacked vias being electrically coupled to the base via, wherein the stacked vias overlap each other, wherein a first via of the stacked vias physically contacts the first redistribution line;
- and
- forming a second connector over the redistribution structure, wherein the stacked vias electrically couple the first connector to the second connector, wherein the stacked vias are laterally spaced apart from the first connector and the second connector in a cross-sectional view.
4 more elements
A semiconductor device comprising:
- a redistribution structure over a semiconductor structure, wherein the semiconductor structure comprises a first connector, wherein the redistribution structure comprises:
- a first insulating layer directly on the semiconductor structure;
- a first metallization pattern, the first metallization pattern comprising a base via and a first redistribution line, the base via extending through the first insulating layer to physically contact the first connector;
- and
- stacked vias over the first insulating layer, the stacked vias being electrically coupled to the base via, wherein a first via of the stacked vias physically contacts the first redistribution line, the stacked vias overlapping each other;
- and
- a second connector over the redistribution structure, wherein the stacked vias electrically couple the first connector to the second connector, wherein the stacked vias are completely spaced apart from the first connector and the second connector in a cross-sectional view.
4 more elements
Dependencies are inferred from the claim text.