Ultrasonic composite vibration device and manufacturing apparatus of semiconductor device

An ultrasonic composite vibration device, comprising a base end part, an enlarged part, and a tip end part arranged in a straight line from a base end side to a tip end side, wherein

• the base end part has a transducer that generates longitudinal vibration and torsional vibration,
• the enlarged part has a cross-sectional area larger than the base end part, and the tip end part has a cross-sectional area smaller than the enlarged part,
• a node of the torsional vibration is located at the enlarged part, and an antinode of the longitudinal vibration and an antinode of the torsional vibration are located at a base end surface and a tip end surface of the ultrasonic composite vibration device, and
• an axial position and an axial dimension of the enlarged part are set to a position and a dimension at which a resonance frequency of the longitudinal vibration and a resonance frequency of the torsional vibration are substantially equal.