Vertical memory devices
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsYuhui HAN, Zhiliang XIA, Wenxi ZHOU
Life of this patent
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Abstract
A semiconductor device includes a first stack of layers stacked on a substrate. The first stack of layers includes a source connection layer that is formed by replacing source sacrificial layers. The semiconductor device includes a channel structure that extends in the first stack of layers. The channel structure includes a channel layer that is in contact with the source connection layer in the first stack of layers. Further, the semiconductor device includes a shield structure formed in the first stack of layers. The shied structure encloses a stack of layers without the source connection layer.
Claims20
A method for forming a semiconductor device, comprising:
- stacking first layers including one or more sacrificial layers on a substrate;
- forming a shield structure that encloses a portion of the sacrificial layers;
- forming channel structures that extending through the first layers in a first direction perpendicular to the substrate, the channel structure including a channel layer;
- forming a gate line cut structure extending through the first layers in the first direction;
- and
- replacing, via the gate line cut structure, the sacrificial layers with at least a source connection layer, the portion of the sacrificial layers enclosed by the shield structure remaining on the substrate.
A method for forming a semiconductor device, comprising:
- forming a first stack including one or more first sacrificial layers on a substrate;
- forming a shield structure extending through the first stack in a first direction perpendicular to the substrate;
- forming a second stack including second sacrificial layers and insulating layers on the shield structure;
- forming support structures that extending through the first stack and the second stack in the first direction;
- forming a gate line cut structure extending through the second stack and at least one of the first sacrificial layers in the first direction;
- and
- etching, via the gate line cut structure, a first portion of the sacrificial layers that forms a source connection opening, wherein the support structures surrounded by a second portion of the sacrificial layers enclosed by the shield structure remaining on the substrate.
A method for forming a semiconductor device, comprising:
- stacking layers including one or more sacrificial layers, sacrificial gate layers and insulating layers on a substrate, the sacrificial layers and the insulating layers being stacked alternatively;
- forming a shield structure that encloses a portion of the stacked layers that include the sacrificial layers, the sacrificial gate layers and insulating layers;
- forming channel structures that extending through the stacked layers in a first direction perpendicular to the substrate, the channel structure including a channel layer;
- forming a gate line cut structure extending through a sacrificial layer in the stacked layers;
- and
- replacing, via the gate line cut structure, the sacrificial layers with at least a source connection layer, the sacrificial layers in the enclosed portion by the shield structure remaining on the substrate.
Dependencies are inferred from the claim text.