US 2024/0203907 A1 · SEMICONDUCTOR PACKAGE AND METHOD

Abstract

In an embodiment, a structure includes a core substrate, a redistribution structure coupled, the redistribution structure including a plurality of redistribution layers, the plurality of redistribution layers comprising a dielectric layer and a metallization layer, a first local interconnect component embedded in a first redistribution layer of the plurality of redistribution layers, the first local interconnect component comprising conductive connectors, the conductive connectors being bonded to a metallization pattern of the first redistribution layer, the dielectric layer of the first redistribution layer encapsulating the first local interconnect component, a first integrated circuit die coupled to the redistribution structure, a second integrated circuit die coupled to the redistribution structure, an interconnect structure of the first local interconnect component electrically coupling the first integrated circuit die to the second integrated circuit die, and a set of conductive connectors coupled to a second side of the core substrate.

Claims20

Dependent claims

A method comprising:

forming a redistribution structure on a first side of a core substrate, the redistribution structure comprising a plurality of redistribution layers, each redistribution layer including a dielectric layer and a metallization layer;
embedding a first local interconnect component in a first redistribution layer of the plurality of redistribution layers, the first local interconnect component comprising a substrate, an interconnect structure on the substrate, and conductive connectors, the conductive connectors being bonded to the metallization layer of the first redistribution layer, the dielectric layer of the first redistribution layer encapsulating the first local interconnect component;
coupling a first integrated circuit die to the redistribution structure, the redistribution structure being interposed between the core substrate and the first integrated circuit die;
and
coupling a second integrated circuit die to the redistribution structure, the redistribution structure being interposed between the core substrate and the second integrated circuit die, the first local interconnect component electrically coupling the first integrated circuit die to the second integrated circuit die.

2 more elements

A method comprising:

forming a first redistribution structure over a first carrier substrate , wherein forming the first redistribution structure comprises:
forming a first set of conductive lines over the first carrier substrate;
bonding a first interconnecting die to the first set of conductive lines with die connectors;
forming a first dielectric layer over the first set of conductive lines and the first interconnecting die, the first dielectric layer, the first set of conductive lines, and the first interconnecting die being a part of a first redistribution layer ;
and
forming a second redistribution layer over the first redistribution layer, the second redistribution layer comprising a second dielectric layer and a second set of conductive lines;
and
removing the first carrier substrate;
coupling a core substrate to a first side of the first redistribution structure;
and
bonding a first integrated circuit die and a second integrated circuit die to a second side of the first redistribution structure, the second side being opposite the first side, the first integrated circuit die and the second integrated circuit die being electrically coupled to the first interconnecting die.

8 more elements

Dependencies are inferred from the claim text.

Semiconductor package and method

Life of this patent

Semiconductor package and method

Life of this patent

Abstract

Claims20