Stress modulating pattern containing bonding dielectric layer

Abstract

A semiconductor structure is provided that includes a stress modulating pattern containing bonding dielectric layer. The stress modulating pattern containing bonding dielectric layer can be formed on a wafer, on a device-containing region that is present on a device wafer, or both a wafer and a device-containing region that is present on a device wafer. The stress modulating pattern is composed of a plurality of patterned structures (metal and/or dielectric) that are embedded at least partially within a bonding dielectric layer. Warpage modulation can be achieved using such a stress modulating pattern containing bonding dielectric layer.

Dependencies are inferred from the claim text.