Semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Hsuan LIN, Hsi Chung CHEN, Ji-Ling WU, Chih-Teng LIAO
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Abstract
A method of manufacturing a semiconductor device includes forming a first dielectric layer over a substrate, forming a metal layer in the first dielectric layer, forming an etch stop layer on a surface of the first dielectric layer and the metal layer, removing portions of the metal layer and the etch stop layer to form a recess in the metal layer, and forming a tungsten plug in the recess. The recess is spaced apart from a bottom surface of the etch stop layer.
Claims20
A semiconductor device, comprising:
- a first dielectric layer disposed over a semiconductor device structure and including a metal layer therein;
- an etch stop layer disposed over the first dielectric layer;
- a second dielectric layer disposed over the etch stop layer;
- a recess in the metal layer and spaced apart from the etch stop layer;
- and
- a tungsten plug,
- wherein an opening is defined in the second dielectric layer, the etch stop layer, and the metal layer, the tungsten plug is disposed in the opening and the recess, and a width of the recess is greater than a width of the opening.
A semiconductor device, comprising:
- a first interlayer dielectric (ILD) layer over a semiconductor device substrate, a metal layer residing within the first ILD layer;
- an etch stop layer over the first ILD layer;
- a second ILD layer disposed over the etch stop layer;
- an opening formed through the second ILD layer and the etch stop layer and into the metal layer,
- a recess in the metal layer and spaced apart from the etch stop layer, the recess having a height and a width, an aspect ratio of the height to the width ranging from 0.2 to 2;
- and
- a tungsten plug within the opening and the recess.
A semiconductor device, comprising:
- a first dielectric layer over a semiconductor device substrate;
- a metal plug comprising cobalt within a region of the first dielectric layer;
- an etch stop layer over the first dielectric layer and the metal plug;
- a second dielectric layer over the etch stop layer, the etch stop layer and the second dielectric layer having a combined thickness;
- a hole extending through the second dielectric layer and the etch stop layer and into the metal plug, the hole having a width at a boundary of the metal plug, and an aspect ratio of the combined thickness to the width ranging from 12 to 100;
- a recess in the metal plug and spaced apart from the etch stop layer;
- and
- a tungsten plug within the hole and the recess.
Dependencies are inferred from the claim text.