Semiconductor device and method of manufacturing the same

A method of manufacturing the semiconductor device comprising:

• forming a first insulating film;
• forming a first groove in the first insulating film by selectively etching the first insulating film;
• forming a first wiring provided in the first groove;
• forming a second insulating film provided on the first insulating film;
• forming a third insulating film provided on the second insulating film;
• forming a second groove provided in communication with the first insulating film, the second insulating film, and the third insulating film and connected to the first wiring, by selectively etching the first insulating film, the second insulating film, and the third insulating film;
• and
• forming a second wiring provided in the second groove,
• wherein the second insulating film contains silicon oxynitride, the second insulating film has a processing selectivity higher than processing selectivity of the first insulating film and the third insulating film, and the second insulating film has a dielectric strength voltage higher than a dielectric strength voltage of silicon nitride.