US 2024/0203882 A1 · SEMICONDUCTOR DEVICE AND METHOD OF FORMING THEREOF

Abstract

Provided is a method of manufacturing an integrated circuit device. The method includes forming a semiconductor device, wherein the semiconductor device has one or more source/drain structures, one or more channel structures and wherein the substrate is on a first side of the semiconductor device. The method also includes forming a back-end-of-line (BEOL) region and forming a bottle-neck shaped backside contact structure in the substrate and in contact with a first source/drain structure of the semiconductor device, wherein the bottle-neck shaped backside contact structure has a first side contacting the first source/drain structure, a second side contacting a backside power rail, and sidewalls extending from the first source/drain structure to the backside power rail; and wherein the backside contact structure has a first region having a positive slope and a second region, adjacent to the first region, having no slope.

Claims20

Dependent claims

A device comprising:

a semiconductor device on a substrate, the semiconductor device having at least two sides and the semiconductor device including:
a bottom dielectric isolation;
a channel structure and a gate at least partially surrounding the channel structure;
a plurality of source/drain structures on opposing sides of the channel structure;
the substrate on a first side of the semiconductor device, the substrate including:
a backside power rail (BPR);
a backside contact structure, the backside contact structure vertically between the backside power rail and a first source/drain structure,
wherein the backside contact structure comprises a first portion contacting the first source/drain structure, having a positive slope,
wherein the backside contact structure further comprises a second portion adjacent to the first portion having no slope, extending from the first portion to a distance further distal from the first source/drain structure;
and
one or more metal signal routing layers disposed on an opposite side of the semiconductor device than the substrate.

8 more elements

A method of manufacturing an integrated circuit device, the method comprising:

forming a semiconductor device having two sides on a substrate, a first side and an opposite side, wherein the semiconductor device has one or more source/drain structures, one or more channel structures and wherein the substrate is on a first side of the semiconductor device;
forming a back-end-of-line (BEOL) region comprising a plurality of metal layers, disposed on the opposite side of the semiconductor device from the substrate;
and
forming a bottle-neck shaped backside contact structure in the substrate and in contact with a first source/drain structure of the semiconductor device;
wherein the bottle-neck shaped backside contact structure has a first side contacting the first source/drain structure, a second side contacting a backside power rail (BPR), and sidewalls extending from the first source/drain structure to the backside power rail;
and
wherein the backside contact structure has a first region having a positive slope and a second region, adjacent to the first region, having no slope.

4 more elements

Dependencies are inferred from the claim text.

Semiconductor device and method of forming thereof

Life of this patent

Semiconductor device and method of forming thereof

Life of this patent

Abstract

Claims20