Flexible mol and/or beol structure

A method of forming a semiconductor structure, the method comprising:

• forming a plurality of first line openings and a plurality of first via openings in a first interlayer dielectric material layer;
• forming an electrically conductive material in each of the plurality of first line openings and the plurality of first via openings to provide a plurality of first metal lines and a plurality of first metal vias at a same level within the first interlayer dielectric material layer, wherein a portion of the electrically conductive material extends above each of the plurality of first line openings and the plurality of first via openings and on top of the first interlayer dielectric material layer;
• performing a subtractive etch on the portion of the electrically conductive material that extends above each of the plurality of first line openings and the plurality of first via openings and on top of the first interlayer dielectric material layer to provide a plurality of second metal lines and a plurality of second metal vias located at a same level;
• and
• forming a second interlayer dielectric material layer on the first interlayer dielectric material layer and laterally adjacent to each of the plurality of second metal lines and the plurality of second metal vias.