Serial directed self-assembly (dsa) processes for forming metal layer with cut

An integrated circuit (IC) device, comprising:

• a plurality of structures, an individual structure comprising:
• a first structure comprising a first electrical insulator,
• a second structure comprising a second electrical insulator and at least partially surrounding the first structure, and
• a third structure over at least part of the first structure in a direction, the third structure comprising an electrically conductive material;
• and
• a plurality of conductive structures that are in parallel with the plurality of structures, individual conductive structures alternating with individual structures,
• wherein a dimension of an individual conductive structure in the direction is the same or substantially the same as a dimension of the individual structure in the direction.

A method for forming an integrated circuit (IC) device, comprising:

• forming a first lamellar pattern over a surface of a conductive layer by applying a first diblock copolymer in a first lamellar phase to the surface of the conductive layer, the first lamellar pattern comprising first lamellar structures alternating with second lamella structures;
• forming, from the conductive layer, a plurality of first conductive structures based on the first lamellar pattern;
• forming a first layer, the first layer comprising the plurality of first conductive structures and an electrical insulator, the plurality of first conductive structures separated from each other by a plurality of portions of the electrical insulator;
• forming a second lamellar pattern over a surface of the first layer by applying a second diblock copolymer in a second lamellar phase to the surface of the first layer, the second lamellar pattern comprising third lamellar structures alternating with fourth lamella structures;
• forming a plurality of insulative structures over the surface of the first layer based on the second lamellar pattern, the plurality of insulative structures separated from each other;
• and
• forming a plurality of second conductive structures, an individual second conductive structure between two adjacent insulative structures.