Skip via with discontinuous dielectric cap
AssigneeInternational Business Machines Corporation
InventorsNicholas Anthony Lanzillo, Koichi Motoyama, Lawrence A. Clevenger, Ruilong Xie
Life of this patent
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Abstract
One or more systems, devices, and/or methods of fabrication provided herein relate to semiconductor devices with discontinuous dielectric caps. According to one embodiment, a semiconductor device can comprise a first level of interconnect wiring, a second level of interconnect wiring, a third level of interconnect wiring, a discontinuous dielectric cap over the second level of interconnect wiring and a skip via connecting the first level of interconnect wiring to the third level of interconnect wiring.
Claims20
A semiconductor device comprising:
- a first level of interconnect wiring;
- a second level of interconnect wiring;
- a third level of interconnect wiring;
- a discontinuous dielectric cap over the second level of interconnect wiring;
- and
- a skip via connecting the first level of interconnect wiring to the third level of interconnect wiring.
A semiconductor device comprising:
- a first level of interconnect wiring;
- a second level of interconnect wiring;
- a third level of interconnect wiring;
- a discontinuous dielectric cap over the second level of interconnect wiring;
- and
- a skip via connecting the first level of interconnect wiring to the third level of interconnect wiring, wherein the skip via comprises an upper section and a lower section, and wherein the upper section comprises a width greater than a width of the lower section.
A method for fabricating a semiconductor device by a fabrication system, the method comprising:
- forming, by the fabrication system, a first level of interconnect wiring;
- forming, by the fabrication system, a second level of interconnect wiring, wherein in the second level of interconnect wiring comprises a first metal track and a second metal track;
- recessing, by the fabrication system, the first metal track and the second metal track;
- depositing, by the fabrication system, a dielectric cap onto the first metal track and the second metal track;
- removing, by the fabrication system, the dielectric cap between the first metal track and the second metal track;
- etching, by the fabrication system, a skip via channel aligned between the first metal track and the second metal track;
- forming, by the fabrication system, a skip via in the skip via channel and a third level of interconnect wiring.
Dependencies are inferred from the claim text.