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US 2024/0203864 A1Published application
Soi substrate and related methods
AssigneeSemiconductor Components Industries, LLC
InventorsMark GRISWOLD, Michael J. SEDDON
Life of this patent
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Abstract
Implementations of a silicon-on-insulator (SOI) die may include a silicon layer including a first side and a second side, and an insulative layer coupled directly to the second side of the silicon layer. The insulative layer may not be coupled to any other silicon layer.
Claims20
A method of making a silicon-on-insulator (SOI) die, the method comprising:
- depositing an insulative layer directly to a second side of a silicon substrate, the silicon substrate comprising a first side and the second side;
- and
- singulating the silicon substrate into a plurality of SOI die;
- wherein the insulative layer is coupled to silicon only through the second side of the silicon substrate;
- and
- wherein the insulative layer comprises an insulative material that fills an entire area within an outer perimeter of the insulative layer.
3 more elements
A method of making a silicon-on-insulator (SOI) die, the method comprising:
- depositing an insulative layer directly to a second side of a silicon substrate, the silicon substrate comprising a first side and the second side;
- backgrinding the silicon substrate to a thickness less than 35 micrometers thick;
- and
- singulating the silicon substrate into a plurality of SOI die;
- wherein the insulative layer is coupled to silicon only through the second side of the silicon substrate;
- and
- wherein an outer perimeter of the silicon substrate is larger than an outer perimeter of the insulative layer.
4 more elements
A method of making a silicon-on-insulator (SOI) die, the method comprising:
- depositing a conductive layer onto a second side of a silicon substrate, the silicon substrate comprising a first side and the second side;
- depositing an insulative layer over the conductive layer;
- and
- singulating the silicon substrate into a plurality of SOI die;
- wherein the insulative layer is coupled to silicon only through the second side of the silicon substrate;
- and
- wherein an outer perimeter of the silicon substrate is larger than an outer perimeter of the insulative layer.
4 more elements
Dependencies are inferred from the claim text.