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US 2024/0203858 A1Published application
Semiconductor structure and method for manufacturing the same
AssigneeMacronix International Co., Ltd.
InventorsCheng-Hsien LU, Yun-Yuan WANG, Dai-Ying LEE
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Abstract
A semiconductor structure is provided. The semiconductor structure comprises a substrate, a via, a liner layer, a barrier layer, and a conductor. The via penetrates through the substrate. The liner layer is formed on a sidewall of the via. The barrier layer is formed on the liner layer. The barrier layer comprises a conductive 2D material. The conductor fills a remaining space of the via.
Claims8
A semiconductor structure, comprising:
- a substrate;
- a via penetrating through the substrate from a top surface to a bottom surface of the substrate;
- a liner layer formed on a sidewall of the via;
- a barrier layer formed on the liner layer, the barrier layer comprising a conductive 2D material;
- and
- a conductor filling a remaining space of the via;
- wherein the semiconductor structure further comprises a second liner layer, a second barrier layer, and a second conductor sequentially formed on the bottom surface of the substrate.
4 more elements
Dependencies are inferred from the claim text.