Semiconductor device

Abstract

There is provided a semiconductor device including a semiconductor chip including a first main surface and a second main surface opposite to the first main surface, an element region formed on the first main surface and including an element part, and a non-element region outside the element region, an insulating layer covering the element region and the non-element region, a first pad formed on the insulating layer and electrically connected to the element part, a second pad formed on the insulating layer and electrically connected to the element part via a path electrically separated from the first pad, a first uneven structure formed by a buried body, which has conductivity and is buried in the insulating layer, below the first pad of the insulating layer, and a second uneven structure formed by deposits deposited on a surface of the insulating layer, below the second pad of the insulating layer.

Dependencies are inferred from the claim text.