Semiconductor device and method for manufacturing the same

A semiconductor device comprising:

• a substrate layer including an insulating layer and a semiconductor layer, wherein the substrate layer includes:
• a first area including the semiconductor layer;
• and
• a second area different from the first area and including a stack of the insulating layer and the semiconductor layer;
• a logic element and a passive element on a first surface of the substrate layer, wherein the logic element is disposed on the first area of the substrate layer and the passive element is disposed on the second area of the substrate layer;
• a signal wiring layer on the first surface of the substrate layer and electrically connected to the logic element and the passive element;
• and
• a power delivery network layer on a second surface of the substrate layer opposite to the first surface.

A method for manufacturing a semiconductor device, the method comprising:

• forming an insulating layer on a silicon substrate;
• patterning the insulating layer to form an opening exposing a portion of the silicon substrate;
• and
• forming a semiconductor layer on the silicon substrate, wherein the semiconductor layer fills the opening and covers at least a portion of the insulating layer, wherein the insulating layer and the semiconductor layer forms a substrate layer.