Semiconductor device

A semiconductor device including a semiconductor substrate with a first main surface and a second main surface which face one another, the semiconductor device comprising:

• a first semiconductor layer of a first conductivity type, the first semiconductor layer being formed between the first main surface and the second main surface of the semiconductor substrate;
• a second semiconductor layer of a second conductivity type, the second semiconductor layer being formed between the first semiconductor layer and the first main surface;
• a third semiconductor layer of the first conductivity type, the third semiconductor layer being selectively formed on the second semiconductor layer on the first main surface side;
• a fourth semiconductor layer of the second conductivity type, the fourth semiconductor layer being formed between the first semiconductor layer and the second main surface;
• a fifth semiconductor layer of the first conductivity type, the fifth semiconductor layer being selectively formed on the fourth semiconductor layer on the second main surface side;
• a first main electrode on the first main surface, the first main electrode being electrically connected to the second semiconductor layer and the third semiconductor layer;
• a second main electrode on the second main surface, the second main electrode being electrically connected to the fourth semiconductor layer and the fifth semiconductor layer;
• a first control electrode switching between conduction and non-conduction between the first semiconductor layer and the third semiconductor layer according to a first control signal;
• a second control electrode switching between conduction and non-conduction between the first semiconductor layer and the fifth semiconductor layer according to a second control signal;
• a first control electrode pad on the first main surface, the first control electrode pad being electrically connected to the first control electrode;
• a breakdown voltage maintaining structure in a terminal region surrounding a pad disposing region on which the first main electrode and the first control electrode pad are disposed;
• a first through-via including a conductor electrically connecting the first main surface to the second main surface, the first through-via penetrating the semiconductor substrate in a thickness direction;
• and
• a second control electrode pad on the first main surface, the second control electrode pad being electrically connected to the second control electrode through the first through-via.