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US 2024/0203780 A1Published application
Dielectric filled alignment mark structures
AssigneeInternational Business Machines Corporation
InventorsSomnath Ghosh, Ruilong Xie, Stuart Sieg, Fee Li Lie, Kisik Choi
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Abstract
A semiconductor structure includes a handler substrate and a device substrate bonded to the handler substrate. The handler substrate comprises a trench, and at least one alignment mark in a bottom surface of the trench. One or more dielectric layers are disposed in the trench and on the at least one alignment mark.
Claims20
A semiconductor structure, comprising:
- a semiconductor substrate comprising a trench;
- at least one alignment mark in a bottom surface of the trench;
- and
- one or more dielectric layers disposed in the trench and on the at least one alignment mark.
1 more element
A method of forming a semiconductor device, comprising:
- forming a trench in a semiconductor substrate;
- forming at least one alignment mark in a bottom surface of the trench;
- and
- forming one or more dielectric layers in the trench on the at least one alignment mark.
1 more element
A semiconductor structure, comprising:
- a handler substrate;
- and
- a device substrate bonded to the handler substrate;
- wherein the handler substrate comprises:
- a trench;
- at least one alignment mark in a bottom surface of the trench;
- and
- one or more dielectric layers disposed in the trench and on the at least one alignment mark.
5 more elements
Dependencies are inferred from the claim text.