Processing arrangement and method for adjusting gas flow

A device, comprising:

• a flow adjusting unit above an opening defined in a wall through which a wafer is transferred for processing, the flow adjusting unit comprising:
• a gas nozzle configured to emit a gas;
• a first layer defining a first aperture having a first aperture size, wherein the first layer is a first distance below the gas nozzle;
• and
• a second layer defining a second aperture having a second aperture size greater than the first aperture size, wherein:
• the second layer is a second distance below the gas nozzle greater than the first distance,
• the gas nozzle provides a first gas flow of the gas to the first layer,
• the first layer disperses the first gas flow to generate a second gas flow of the gas that is directed to the second layer, and
• the second layer channels the gas having the second gas flow in a direction parallel to the wall to generate a third gas flow of the gas directed across the opening.

A device, comprising:

• a transfer chamber defining a transfer space, the transfer chamber comprising a wall defining an opening through which a wafer is transferred into the transfer space for processing;
• a fan unit above the transfer space to provide a first gas flow of a first gas into the transfer space;
• and
• a flow adjusting unit above the opening and below the fan unit, wherein the flow adjusting unit comprises:
• a gas nozzle configured to emit a second gas;
• a first layer below the gas nozzle;
• and
• a second layer below the first layer, wherein:
• the gas nozzle provides a second gas flow of the second gas to the first layer,
• the first layer disperses the second gas flow to generate a third gas flow of the second gas that is directed to the second layer;
• and
• the second layer channels the third gas flow in a direction parallel to the wall to generate a fourth gas flow of the second gas that is directed across the opening and that inhibits the first gas flow of the first gas from passing through the opening.