Wafer evaluation method, wafer production method and device production method
AssigneeResonac Corporation
InventorLing GUO
Life of this patent
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Abstract
A wafer evaluation method according to the present embodiment includes installing a SiC wafer or a SiC epitaxial wafer on a porous plate having a plurality of through holes; installing a lid on a second surface opposite to a first surface of the SiC wafer or the SiC epitaxial wafer with an O-ring therebetween; supplying a gas into a space surrounded by the second surface, the O-ring and the lid and pressurizing the inside of the space; and measuring the pressure in the space after a certain period has elapsed and inspecting whether there is a threading defect in the SiC wafer or the SiC epitaxial wafer.
Claims13
A wafer evaluation method, comprising:
- installing a SiC wafer or a SiC epitaxial wafer on a porous plate having a plurality of through holes;
- installing a lid on a second surface opposite to a first surface of the SiC wafer or the SiC epitaxial wafer with an O-ring therebetween;
- supplying a gas into a space surrounded by the second surface, the O-ring and the lid and pressurizing the inside of the space;
- and
- measuring the pressure in the space after a certain period has elapsed and inspecting whether there is a threading defect in the SiC wafer or the SiC epitaxial wafer.
Dependencies are inferred from the claim text.