Cavity shaping and selective metal silicide formation for cmos devices
AssigneeApplied Materials, Inc.
InventorsNicolas Louis BREIL, Avgerinos V. GELATOS
Life of this patent
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Abstract
A method of forming an electrical contact in a semiconductor structure includes performing a cavity shaping process on a semiconductor structures having an n-type metal oxide semiconductor (n-MOS) region and a p-type MOS (p-MOS) region, the cavity shaping process comprising forming an n-MOS cavity in an exposed surface of the n-MOS region and a p-MOS cavity in an exposed surface of the p-MOS region, and performing a first selective deposition process to form a p-MOS cavity contact, selectively in the p-MOS cavity.
Claims20
A method of forming an electrical contact in a semiconductor structure, comprising:
- performing a cavity shaping process on a semiconductor structures having an n-type metal oxide semiconductor (n-MOS) region and a p-type MOS (p-MOS) region, the cavity shaping process comprising forming an n-MOS cavity in an exposed surface of the n-MOS region and a p-MOS cavity in an exposed surface of the p-MOS region;
- and
- performing a first selective deposition process to form a p-MOS cavity contact, selectively in the p-MOS cavity.
A method of forming an electrical contact in a semiconductor structure, comprising:
- performing a pre-clean process on a semiconductor structures having an n-type metal oxide semiconductor (n-MOS) region, a p-type metal oxide semiconductor (p-MOS) region, and a dielectric layer having a first trench over the n-MOS region and a second trench over the p-MOS region;
- performing a cavity shaping process to form an n-MOS cavity in an exposed surface of the n-MOS region within the first trench and a p-MOS cavity in an exposed surface of the p-MOS region within the second trench;
- performing a first selective deposition process to form a p-MOS cavity contact, selectively in the p-MOS cavity;
- performing a second selective deposition process to form an n-MOS cavity contact, selectively in the n-MOS cavity;
- performing a blanket deposition process to form a barrier layer on exposed inner surfaces of the first trench and the second trench and on the exposed surface of the dielectric layer;
- and
- performing a metal fill process to form a first contact plug in the first trench and a second contact plug in the second trench.
A processing system, comprising:
- a first processing chamber;
- a second processing chamber;
- and
- a system controller configured to cause the processing system to:
- perform, in the first processing chamber, a cavity shaping process on a semiconductor structures having an n-type metal oxide semiconductor (n-MOS) region and a p-type metal oxide semiconductor (p-MOS) region, the cavity shaping process comprising forming an n-MOS cavity in an exposed surface of the n-MOS region and a p-MOS cavity in an exposed surface of the p-MOS region;
- and
- perform, in the second processing chamber, a first selective deposition process to form a p-MOS cavity contact, selectively in the p-MOS cavity.
Dependencies are inferred from the claim text.