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US 2024/0203738 A1Published application
Semiconductor device having work function metal stack
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYen-Yu CHEN, Yu-Chi LU, Chih-Pin TSAO, Shih-Hsun CHANG
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Abstract
A device includes gate spacers over a substrate, and a gate structure between the gate spacers. The gate structure includes an interfacial layer over the substrate, a metal oxide layer over the interfacial layer, a metal oxide layer over the interfacial layer, a first metal nitride layer over the metal oxide layer, a second metal nitride over the first metal nitride layer, and a tungsten-containing material interposing the first metal nitride layer and the second metal nitride layer.
Claims20
A device, comprising:
- gate spacers over a substrate;
- and
- a gate structure disposed between the gate spacers, the gate structure comprising:
- an interfacial layer over the substrate;
- a metal oxide layer over the interfacial layer;
- a first metal nitride layer over the metal oxide layer;
- a second metal nitride layer over the first metal nitride layer;
- and
- a tungsten-containing material interposing the first metal nitride layer and the second metal nitride layer.
6 more elements
A device, comprising:
- gate spacers over a substrate;
- and
- a gate structure between the gate spacers, the gate structure comprising:
- a metal oxide layer over the substrate;
- a first metal nitride layer over the metal oxide layer;
- a tungsten-containing material over the first metal nitride layer;
- a second metal nitride layer over the tungsten-containing material;
- and
- a tungsten structure spaced apart from the tungsten-containing material at least by the second metal nitride layer.
6 more elements
A device, comprising:
- a substrate;
- gate spacers over the substrate;
- and
- a gate structure between the gate spacers, the gate structure comprising:
- an interfacial layer;
- a tungsten-containing material over the interfacial layer;
- a gate fill metal over the tungsten-containing material;
- and
- a metal nitride layer interposing the tungsten-containing material and the gate fill metal.
6 more elements
Dependencies are inferred from the claim text.